A2G35S200-01SR3

A2G35S200-01SR3

Billedet er til reference, kontakt os venligst for at få det rigtige billede

Producentdel A2G35S200-01SR3
Fabrikant NXP Semiconductors
Beskrivelse AIRFAST RF POWER GAN TRANSISTOR
Kategori diskrete halvlederprodukter
Familie transistorer - fets, mosfets - rf
Livscyklus: New from this manufacturer.
Levering: DHL FedEx Ups TNT EMS
Betaling T/T Paypal Visa MoneyGram Western Union
Datablad A2G35S200-01SR3 PDF

Tilgængelighed

På lager 182
Pris per stk $ 264.51000

A2G35S200-01SR3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

A2G35S200-01SR3 specifikationer

Type Beskrivelse
serie:-
pakke:Tape & Reel (TR)Cut Tape (CT)
del status:Active
transistor type:GaN HEMT
frekvens:3.4GHz ~ 3.6GHz
gevinst:16.1dB
spænding - test:48 V
nuværende rating (ampere):-
støjtal:-
strøm - test:291 mA
effekt - output:180W
spænding - nominel:125 V
pakke/etui:NI-400S-2S
leverandørens enhedspakke:NI-400S-2S

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


Payment
Payment

TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.

Fremhævede Produkter

Copyright © 2024 ZHONG HAI SHENG TECHNOLOGY LIMITED All Rights Reserved.

Fortrolighedserklæring | Vilkår for brug | Kvalitetsgaranti

Top